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Vaidotas Kaşukauskas

Contact info:

Prof., Habil.dr. Vaidotas Kaşukauskas

Semiconductor Physics Department
Vilnius University
Sauletekio al., 9-III
LT-2040 Vilnius
, Lithuania

Phone: +370-5 2366070
Fax:     +370-5 2366003

E-mail:
vaidotas.kazukauskas@ff.vu.lt
WEB: www.ltmrs.lt/members/v_kazukauskas


Vaidotas Kaşukauskas was born on April 28th, 1958 in Vilnius, Lithuania. 
 Education : 
1976 - 1981, Student of the Faculty of Physics of Vilnius University (VU), Lithuania;
1984 - 1987, Post-graduate student at the Department of Semiconductor Physics, VU;
1988 - 1989, Post-doctoral student at Kaiserslautern University, Germany.
 Academic Degrees : 
- 1981, Master of Science with Honors, Diploma of Vilnius University,
Professional certification: Physicist, High school teacher;
- 1987, Doctor of Natural Sciences,
Ph.D. Thesis: 
Investigation of deep levels and inhomogeneities of semiinsulating GaAs, using the transient photogalvanomagnetic phenomena;
- 1999, Habil. Dr. of Physical Sciences,
Habilitation Thesis: 
Carrier transport in GaAs with low carrier concentration.
 Employment : 
Currently I am a professor at the Semiconductor Physics Department and a senior researcher at the 
Institute of Materials Research and Applied Sciences of Vilnius University.  
 Academic Honors, Grants : 
1988 - 1989, 1993, and 1997 - Grants of Deutscher Akademischer Austauschdienst (DAAD), Germany; 
1993 - Grant of the European Commission, Brussels; 
1996 - Grant of Konferenz der Deutschen Akademien der Wissenschaften (KDAW), Germany; 
1999, 2000 - Grants of the Royal Society, UK; 
2000 - 2001 - Grant of the National Science Council of Taiwan; 
2002 - Grant of Deutsche Forschungsgemeinschaft (DFG), Germany; 
2003 - Gilibert grant of the French and Lithuanian State Science Foundations.
 Academic Visits Abroad : 
1988 - 1989, 1993 - University of Kaiserslautern, Germany; 
1996 - University of Freiberg, Germany; 
1997, 2002 - University of Karlsruhe, Germany; 
1998, 1999 - Glasgow university, UK; 
2000-2001 - National Tsing Hua University, Taiwan; 
2003 - CEA, France.
 Research Activities and Scientific Accomplishments  
The topic of my research work is investigation of transport, optical and thermally stimulated phenomena in semiconductors 
Si, GaAs, SiC, GaN other A2B6, A3B5 compounds and structures as well as polymer semiconductors. 
I have all in all 121 scientific publications. Many of them appeared in the international magazines and were presented 
at the international conferences. A number of my articles were published in the world - leading journals, e.g., 
“The Physical Review B”, “Journal of Applied Physics”, “Applied Physics Letters”, “Journal de Physique” and others. 
Our original investigation method of the transport and recombination phenomena is patented as an invention. 
I also have published two text-books. All in all I have spent more than three years working abroad at the well-known universities 
and research centres. 
The financial support for these academic and scientific projects was given by international state and private foundations, 
basing on the competitive ability of my scientific projects. 
I know well Lithuanian, English, German, and Russian languages, and have a basic knowledge of French and Polish languages.

 Some selected publications : 
V. Kaşukauskas, J. Grohs, C. Klingshirn, G. Wingen, D. Jager. 
Dynamics of Optical and Electrooptical Switching in Photothermal Bistable CdS Crystals. 
Zeitschrift für Physik B - Condensed Matter, 1990, V.79, P.149-157. 
V. Kaşukauskas, R. Kiliulis. 
The Evidence of Normal EL2 State Changes in Temperature Range 120-150 K in Semi-Insulating GaAs. 
Phys. Stat. Sol.(b), 1993, V.179, No 1, P.K21-K25.
R. Kiliulis, V. Kaşukauskas. 
Model of Charge Transfer Induced by EL2-EL2* Transformation in Semi-Insulating GaAs. 
Phys. Stat. Sol.(b), 1993, V.180, No 1, P.155-162.
V. Kaşukauskas, J. Vaitkus. 
Investigation of Transient Transport and Recombination Phenomena in Semi-Insulating GaAs. 
Zeitschrift für Physik B - Condensed Matter. 1994, V.94, N 4, P.401-407.
V. Kaşukauskas
Photo-Magneto-Electric Effect in Semi-Insulating GaAs: Carrier Lifetimes and Influence of the Defect Structure. 
Appl. Phys. A - Materials Science and Processing. 1995, V.60, N5, P.509-514. 
V. Kaşukauskas, H. Issler, J. Grohs, C. Klingshirn. 
Optical Oscillations and Their Peculiarities Caused by Internal Switching Delay in Optically Bistable CdS Crystals. 
Phys. Stat. Sol. (b). 1995, V 187, N 1, P.241-252.
V. Kaşukauskas, H. Issler, J. Grohs, M. Kuball, C. Klingshirn. 
Investigation of a Spatio-Temporal Development of a Bistable Switching in thin CdS Crystals Using Two Exciting Beam Geometry. 
Optics.Comm. 1995, V 122, N 1-3, P. 83-93.
R. Kiliulis, V. Kaşukauskas, J. Storasta, and J.-V. Vaitkus. 
Charge Redistribution and Potential Barrier Reconstruction in SI GaAs Caused by EL2 State Change. 
Journal de Physique I, 1996, V. 6, P. 1165-1187.
V. Kaşukauskas, J. Storasta, and J.-V. Vaitkus. 
Interaction of Deep Levels and Potential Fluctuations in Scattering and Recombination Phenomena in Semi-Insulating GaAs. 
J. Appl. Phys. 1996, V. 80, N 4, P. 2269-2278. 
R. Kiliulis, V. Kaşukauskas, J. C. Bourgoin. 
Distinction between Electron and Hole Traps in Semi-Insulating GaAs. 
J. Appl. Phys.1996, V. 79, N 9, P. 6951-6953.
V. Kaşukauskas
Investigation of Transient Transport Effects in SI GaAs Caused by Defect State Change and Their Interaction. 
Materials Science and Engineering B 1997, V. 44, N 1-3, P. 220-222. 
V. Kaşukauskas, G. Kühnel, W. Siegel. 
Enhancement of the Hall Mobility in Undoped GaAs with Low Carrier Concentration by Light Excitation. 
Appl. Phys. Lett. 1997, V. 70, N 13. P. 1751-1753.
V. Kaşukauskas
Influence of Defect Inhomogeneities on the Hall Mobility and Concentration in Undoped GaAs. 
J. Appl. Phys.1998, V. 84, N 4, P. 2053-2061.
V. Kaşukauskas, M. Grün, St. Petillon, A. Storzum, C. Klingshirn. 
Experimental Observation of the Two-Dimensional Electron Gas in CdS Quantum Layers of CdS/ZnSe Heterostructures. 
Appl. Phys. Lett., 1999, V. 74, N 3, P. 395 - 397.
G. Kavaliauskienë, V. Kaşukauskas, V. Rinkevièius, J. Storasta, J. V. Vaitkus, R. Bates, V. O’Shea, K. M. Smith. 
Thermally Stimulated Currents in Semi-Insulating GaAs Schottky Diodes and Their Simulation. 
Appl. Phys. A - Materials Science and Processing, 1999, N 69, P. 415 - 420.
V. Kaşukauskas, J. Storasta, J.-V. Vaitkus 
Effect of Indium Doping on Transient Transport Phenomena in Semiinsulating GaAs. 
Phys. Rev. B. 2000, V. 62, N 16, P. 10882-10890.
V. Kaşukauskas, J. Storasta, J.-V. Vaitkus. 
Transient Electron Transport in Indium-Doped Semiinsulating GaAs. 
J. Appl. Phys. 2001, V. 89, N 1, P. 557 - 560.
V. Kaşukauskas, E. Kuprusevièius, J.-V. Vaitkus, K. M. Smith, S. Nenonen, A. Owens. 
Defect Levels and Inhomogeneities of High Purity High Resistivity GaAs Films Grown by Vapour Phase Epitaxy. 
Proc. SPIE 2001, V. 4318, P. 151-156.
V. Kaşukauskas
Charge Carrier Traps in MEH-PPV Polymer Diodes. 
Lith. J. of  Phys. 2001, V. 41, N 4-6, P. 381-385.
V. Kaşukauskas, H. Tzeng, S.-A. Chen. 
Trap Levels and Effect of Oxygen in MEH-PPV Polymer Diodes. 
Appl. Phys. Lett. 2002, V. 80, N 11, P. 2017-2019.
V. Kaşukauskas, E. Kuprusevièius, J.-V. Vaitkus, K. M. Smith. 
Defects, Their Interaction and Modification by Irradiation in Semi-Insulating GaAs. 
Mat. Sci. Forum, 2002, V. 384/385, P. 317-320. 
V. Kaşukauskas, H. Tzeng, S.-A. Chen. 
Charge Traps and Effect of Oxygen in MEH-PPV Polymer Devices. 
Mat. Sci. Forum, 2002, V. 384/385, P. 321-324. 
M. Dremel, H. Priller, M. Grün, C. Klingshirn, and V. Kaşukauskas. 
Optical and Electrical Properties of the CdS Quantum Wells of CdS/ZnSe Heterostructures. 
Proc. SPIE, 2003, V. 5122, P. 397-404. 
V. Kaşukauskas
Oxygen Related Defects in MEH-PPV Polymer Light Emitting Diodes. 
Proc. SPIE, 2003, V.5122, P. 166-175.
M. Dremel, H. Priller, M. Grün, C. Klingshirn, and V. Kaşukauskas. 
Electrical and Optical Properties of the CdS Quantum Wells of CdS/ZnSe Heterostructures. 
J. Appl. Phys., 2003, V. 93, N 10, P. 6142-6149.

Last updated: 10.01.2008