Juozas Vidmantis Vaitkus
Juozas Vidmantis Vaitkus was born in Kedainiai
(Lithuania) in 1941.
He received the diploma of Physicist (Semiconductor Physics) in 1963
and the Ph.D. degree in Physics (theses Transient photoconductivity in CdSe crystals and polycrystalline layers, 1967, that included the results of work in N.Basov laboratory (Moscow)) at Vilnius University.
He was for post-doctoral studies in Royal Institute of Technology in Stockholm.
The Dr.Sc. degree in Semiconductor and Dielectric Physics received after defence of theses Non-linear photoconductivity and related phenomena in highly excited by laser radiation semiconductors in 1978 was awarded by VAK USSR.
He works in a research position of Department of semiconductor physics since 1967, since 1977 he is a head of this Department, since of 1992 he is a director of Institute of Materials Science and Applied Research and since 1994 he is a Head of Material Research Department.
During his research work he spent a few periods in The Royal institute of technology in Stockholm, Linkoping (Sweden), Prague (Chech Republic), Frankfurt/Main (Germany), Strasbourg (France), Notre Dame (USA) and Glasgow (UK) universities as a visiting scientist or visiting professor. He was elected as a Honorary visiting professor at Glasgow university (1997-2003).
He is professor of Vilnius University since 1980 and was elected as a tenure in 1993. Since 1985 he is elected as a corresponding member of Lithuanian Academy of Sciences.
Prof.J.V.Vaitkus received a few national and state awards for scientific achievements, his scientific research results were published in one monograph and more than 250 papers and presented as more than 200 contributions at the Conferences.
His 26 doctoral students defended doctoral theses (PhD), four of them received Dr.Sc. degree.
Field of scientific studies :
Some publications :
J.Vaitkus. K.Jarasiunas, E.Gaubas, L.Jonikas, R.Pranaitis, L.Subacius. The diffraction of light by transient gratings in crystalline, ion-implanted and amorphous silicon (Invited paper). IEEE J.Ouant.Electr.1986, v.22, p.1298-1305
J.Vaitkus, E.Gaubas, K.Jarasiunas, M.Petrauskas. Mapping of GaAs and Si wafers and ion-implanted layers by light induced scattering and absorption of IR light. Semicond.Sc.Technol., 1992, v.7, p.131-134.
R.Büttner, S.Ratz, N.Schroeder, S.Marquardt, U.Gerhardt, R.Gaska, J.Vaitkus. Analysis of angle-resolved photoemission date of PbS (100) surfaces within the direct transition model. Phys.Rev.B, 1996, v.53, No.15, p.10336-10343.
V.Kazukauskas, J.Storasta, J.-V.Vaitkus. Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi-insulating GaAs. J.Appl.Phys., 1996, v.80, No.4, p.2269-2278.
E.Gaubas, A.Kaniava, J.Vaitkus. Investigation of recombination parameters in silicon structures by infrared and microwave transient absorption techniques. Semicond. Sci. Technol., 1997, v.12, No.1, p.1-10.
R.Bates, R.Didziulis, V.Kazukauskas, V.OShea, C.Raine, V.Rinkevicius, K.M.Smith, J.Storasta, J.Vaitkus. Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detector. IEEE Transactions on Nuclear Science, 1998, v.45, No.3, p.591-596.
J.Vaitkus, R.Baubinas, V.Kazlauskienė, J.Miškinis, A.Mažeikis, E.Žąsinas, A.Žindulis. Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and simulation of atom behavior. Microelectron. J., 1999, v.30, No.4-5, p.335-340.
Last updated: 22.02.2002