Gintautas Tamulaitis was born in Jurbarkas
district, Lithuania, in 1956.
He graduated with honours from Vilnius University in 1979, received his PhD degree in Physics (Laser Spectroscopy of Nonequilibrium Carriers in CdSe Single Crystals) in 1985, and Habilitated Doctor degree (Optical Spectroscopy of Nonequilibrium Quasiparticles in Novel Materials for Optoelectronics) in 2001, also at Vilnius University.
Since then, he is doing experimental research work at Semiconductor Physics Department and at the Institute of Materials Science and Applied Research.
Since 2002, he is head of Semiconductor Physics Department and a senior researcher at the Institute of Materials Science and Applied Research.
Luminescence and luminescence excitation spectroscopies, time-resolved excite-and-probe technique, Raman scattering are the main experimental techniques used by Prof. G.Tamulaitis.
He spent some time as a visiting scholar at University of California in Berkeley, University of South Carolina, and Rensselaer Polytechnic Institute, USA
He has authored more than 80 papers and more than 80 presentations at conferences.
Research Fields :
Physics and applications of III-nitrides, nonlinearities and carrier behaviour in semiconductor nanocrystals, light emission mechanisms in heavy oxide scintillator crystals, charge separation in sensitized polymers.
Selected recent publications :
M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius,
Lattice and energy band engineering in AlInGaN/GaN heterostructures, Appl. Phys. Lett. 76, 1161-1163 (2000).
G. Tamulaitis, V. Gulbinas, G. Kodis, A. Dementjev,
L. Valkūnas, I. Mochalov, and E. Raaben,
Optical nonlinearities of glass doped with PbS nanocrystals, - J. Appl. Phys. 88, No. 1, 178-182 (2000).
G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas,
M. A. Khan, J. W. Yang, J. Zhang, G. Simin, M. S. Shur, and R. Gaska,
Optical bandgap formation in AlInGaN alloys, - Appl. Phys. Lett. 77, 2136 (2000).
V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan,
J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska,
Indiumsilicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors, Appl. Phys. Lett. 79, 1903-1905 (2001).
S. Burachas, S. Beloglovski, I. Makov, Y. Savelieva,
N. Vassilieva, M. Ippolitov, V. Manko, S. Nikulin, A. Vassiliev, A. Apanasenko,
and G. Tamulaitis,
Influence of inclusions of intermediate tungsten oxides on characteristics of PbWO4 scintillators, J. Cryst. Growth 243 (3-4), 367-374 (2002).
V. Adivarahan, S. Wu, A. Chitnis, R. Pachipulusu,
V. Mandavili, M. Shatalov, J. P. Zhang, M. A. Khan, G. Tamulaitis, A. Sereika,
I. Yilmaz, M. S. Shur, R. Gaska,
AlGaN single-quantum-well light-emitting diodes with emission at 285 nm, Appl. Phys. Lett. 81, No.19, 3666-3668 (2002).
R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan,
G. Tamulaitis, I. Yilmaz, M. S. Shur, J. C. Rojo, L. J. Schowalter,
Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN, Appl. Phys. Lett. 81, No. 24, 4658-4660 (2002).
M. Shatalov, A. Chitnis, V. Mandavili, R. Pachipulusu,
J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. Asif Khan, G. Tamulaitis, A. Sereika,
I. Yilmaz, M. S. Shur, R. Gaska,
Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm, Appl. Phys. Lett. 82, No.2, 167-169 (2003).
Last updated: 30.04.2003